Physics, Unit # 18, Electronics, F. Sc Part-II
Electronics,
Ch # 18
1. Depletion
regions has
a. Electrons only b. holes only c. Neither Electrons nor Holes d. Both Electrons and Holes
2. For rectification we use
a. Diode b. Transformer c. capacitor d.
none of these
3. Reverse
biasing the CB junction of a transistor
a. Reverse -biases the EB
junction b. Forward biases the EB
junction
c. Is necessary for it to
amplify d. Is not
necessary for it to amplify
4. Specially
designed semi conductor diodes used as indicator lamps in electronic circuits
are
a. Photodiodes b. Solar cells c. LED d. Photovoltaic cell
5. Which
one of the following is correct for a common emitter (CE) amplifier?
a. Its current gain is high b. It has very high voltage gain c. It produces high power gain d. All of them
6. Since
the input resistance of an ideal OP-amplifier is infinite
a. its output resistance is
zero b.
It becomes a current controlled device
c. its input current is
zero d. none of them
7. An open loop OP-amplifier has output
voltage Vo and difference between non inverting input voltage Vi its
open loop gain is given by
a. AOL =Vo/Vi b.
AOL=Vi/Vo c. AOL =Vo x
Vi d. none of the two
8. The closed loop gain of an OP-amplifier
is G = -R2/R1.the negative sign shows that output signal
is out of phase w.r.t. input signal by
a. 450 b.
900 c.
1800 d. 2700
9. Linear
integrated circuits (LICs) find their applications in
a. operational amplifiers b. voltage comparators c. comparator d. all of them
10. The
emitter-base junction of a transistor is usually
a. forward biased b. reverse biased c. non-conduction d.
working in the break-down region
11. The
output of 2-input Or gates is 0 only when its
a. both inputs are 0 b. either input is 1 c. both inputs are 1 d. either input is 0
12. An XOR gate
produces an output only when its two inputs are
a. high b. low c. different d.
same
13. Equivalent
logic circuit of XOR gate can be designed by the combination of
a. AND, OR and NOT gates b. NAND, NOR and NOR gates
c. NOT, AND, and NOR gates d. NOT, AND and NOR gates
14. Equivalent
logic circuit of XNOR gate can be designed by the combination of
a.AND, OR , and NOT gate b. AND, NOR, and NOT
gate
c. NAND, AND, and NOR gate d. NAND, AND
and NOR gates
15. Donor
impurities are
a. Germanium, Silicon etc b. Indium, Gallium etc c.
Antimony, arsenic etc. d. Sodium,
Zinc etc.
16. In full
wave rectification, the output DC voltage across the load is obtained for
a. The positive half cycle
of input AC only b. The
negative half cycle of input AC only
c. The completes cycle of input
AC only d. All of the above
17. Demodulation
a. Is performed at the
transmitting station b. Removes
side bands
c. Rectifies modulated
signal d. Is opposite to of modulation
18. In
amplitude modulation
a. Carrier frequency is
changed b. Carrier
amplitude is changed
c. Three sides bands are
produced d. Fidelity is improved
19. 100%
modulation is produced in AM when carrier,
a. Frequency equals signal
frequency b. Frequency exceed
signal frequency
c. Amplitude equals signals
amplitude d. Amplitude exceed
signals amplitude
20. A non
conducting semiconductor diode is
a. Forward biased b. Poorly biased c. Reverse biased d. None
21. Special
algebra used in digital system is called
a. De-Morgan Algebra b. Bernoulli's Algebra c. Boolean's Algebra d.
All of the above
22. Photovoltaic
cell is device that converts
a. Light energy into
electrical energy b. Chemical
energy into electrical energy
c. Light energy into sound
energy d. None of these
23. Identify which one is might be the most important building
block of Circuit any complex; electric circuit
a. diode b. Resistor c. Thermistor d. Amplifier
24. The
barrier potential across the p-n junction is created by
a. majority carriers b. minority carries c. fixed rows of oppositely charged ions d.
depletion layer
25. The
barrier potential of silicon diode at room temperature is .
a. 0.3 V b. 0.7 V c. 1 V d. 2mV
26. The
width of depletion region of a junction
a. increases under forward
bias b.
is independent of applied voltage
c. increases under revere
bias d. None of them
27. A
non-conduction semiconductor diode is
a. forward biased b. poorly biased c.
reverse biased d. None
28. The
characteristics of a transistor are
a. Light dependents b. Temperature dependant c. Energy dependent d. Sound dependant
29. A photo
diode is usually made from
a. bismuth
b. antimony c.
Silicon d. None
30. A light
emitting diode (LED) is made from
a. gallium arsenide (GaAs) b. gallium phosphide (GaP) c. gallium arsenic phosphide (GaAsP) d. all of them
31. A light
emitting diode (LED) emits light only when
a. forward biased b. reverse biased c. unbiased d. none of them
32. A
photo-diode can switch its current ON or OFF in
a. milli-seconds b. micro-seconds c. nano-second d. centi-second
33. The
term transistor stands for
a. transfer resistor b. transfer of voltage c. transfer of power d. transfer of current
34. The
emitter of a transistor is generally doped the heaviest because it
a. has to dissipate maximum
power b. has to supply the
charge carries
c. is the first region of
the transistor d. must
posses low resistance
35. For proper working of transistors in
normal circuit
a. emitter-base junction is reverse biased and
collector-base junction is forward biased
b. emitter-base
junction is forward biased and collector-base junction is reverse biased
c. emitter-base junction is
forward biased and collector-base junction is forward biased
d. none of them
36. Transistor
is an electronic device that has
a. two terminals b.
Three terminals c.
four terminals d. None of them
37. For
common-emitter configuration of n-p-n transistor, the current gain is given by
a. IC / IB b. IB /
Ic c. IE / IB d. IE/ IB
38. The
transistor is basically a
a. Voltage
amplifier b. current amplifier c.
Rectifier d. None of these
39. A diode
can convert
a. ac into dc but not dc
into ac b. dc into ac but not
ac into dc
c. ac into dc & dc into
ac d. neither ac into
dc nor dc into ac
40. In a
transistor
a. Length of emitter is
greater than that of collector b.
Length of collector is greater is greater than that of emitter
c. 80th collector and
emitter have the same length d.
Anyone of emitter or collector can have greater length
41. In a
transistor, the basic is
a. An insulator b.
A conductor of higher resistance
c. A conductors of lowers
resistance d. An extrinsic
semiconductors.
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